Leakage mechanism in GaN and AlGaN Schottky interfaces
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چکیده
منابع مشابه
Breakdown Enhancement Voltage of Algan/Gan Hemts with Schottky and OHMIC Drain Contacts
In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The bre...
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